Paper Title:
Small-Signal Circuit Elements of MIS-Type Nanostructures
  Abstract

Starting from a mean field calculation for the static capacitance of a MIS-nanostructure with a near back gate [P.N. Racec, E. R. Racec and U. Wulf, Phys. Rev. B 65, 193314, (2002)] we develop an approach to determine the equivalent small-signal circuit. The analyzed system has an open character, taken into account in the Landauer-Büttiker formalism. The Coulomb interaction is treated in Hartree approximation. Consistent with our static calculations we determine the charge-charge correlation function in the random phase approximation to find the ac-admittances. The small-signal circuit consists of a voltage-dependent capacitance and a resistance in series. Beyond a characteristic frequency c ν they become frequency dependent. The characteristic frequency is given by the life time of specific resonance which develops in the system.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
549-552
DOI
10.4028/www.scientific.net/SSP.121-123.549
Citation
P.N. Racec, U. Wulf, "Small-Signal Circuit Elements of MIS-Type Nanostructures", Solid State Phenomena, Vols. 121-123, pp. 549-552, 2007
Online since
March 2007
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Price
$32.00
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