Paper Title:
Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots
  Abstract

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
557-560
DOI
10.4028/www.scientific.net/SSP.121-123.557
Citation
J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi, S. Miyazaki, "Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots", Solid State Phenomena, Vols. 121-123, pp. 557-560, 2007
Online since
March 2007
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Price
$32.00
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