Paper Title:
Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model
  Abstract

Our experiments highlight that gold-silicon eutectics are fairly influenced by the thickness of Au layer and the wastage of Si, i.e. the wasting thickness of the silicon die. In the experiments, a bonding intensity testing method, called Press-arm model, is used to verify the Au-Si eutectics bonding strength. Through the intensity value of the bonding interface, we analyze the eutectics condition of the bonding interface at different temperatures and discuss the optimum procession of the wafer capsulation.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
575-578
DOI
10.4028/www.scientific.net/SSP.121-123.575
Citation
X. Wang, D.C. Zhang, J. Li, Z. You, B. Cai, "Au-Si Eutectic Wafer Bonding Mechanism Analysis and a Intensity Model", Solid State Phenomena, Vols. 121-123, pp. 575-578, 2007
Online since
March 2007
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