Paper Title:
GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes
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Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
587-590
DOI
10.4028/www.scientific.net/SSP.121-123.587
Citation
G.M. Wu, C.F. Tsai, C.F. Shih, N.C. Chen, W.H. Feng, "GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice for Light Emitting Diodes", Solid State Phenomena, Vols. 121-123, pp. 587-590, 2007
Online since
March 2007
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