Paper Title:
Pd/Oxide/InGaP MOS Schottky Hydrogen Sensor with Native Thin Oxide
  Abstract

Liquid phase deposition (LPD) grown InGaP native oxide near room temperature (~60oC) is demonstrated and investigated for the first time. A high oxidation rate (~80nm/hr) is obtained and checked by SEM and AES. The oxide is determined to be composed of InPO4 and Ga2O3 which are analyzed by the results of XPS measurement. Due to the presence of excellent quality of InGaP native oxide, high hydrogen (H2) sensitivity in output current of Pd/oxide/InGaP MOS Schottky diode is observed. Under the applied voltage of -1V and 50ppm H2/air, a high sensitivity of 1090 is obtained. In addition, an obvious variation of output current and a short response time due to the exposure to different H2 concentration are also achieved.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
627-630
DOI
10.4028/www.scientific.net/SSP.121-123.627
Citation
K. F. Yarn, Y.L. Lin, M.C. Chure, K.K. Wu, S.C. Chang, "Pd/Oxide/InGaP MOS Schottky Hydrogen Sensor with Native Thin Oxide", Solid State Phenomena, Vols. 121-123, pp. 627-630, 2007
Online since
March 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jie Sun, Lizhong Hu, Zhaoyang Wang, Guotong Du
Abstract:This work demonstrates the condition optimization during liquid phase deposition (LPD) of SiO2/GaAs films. LPD method is further applied to...
1725
Authors: Ming Kwei Lee, Chih Feng Yen, Tsung Hsiang Shih, Chen Lia Ho, Hung Chang Lee, Hwai Fu Tu, Cho Han Fan
Abstract:The high Dit is the major problem of III-V compound semiconductor MOSFET, which causes the pinning of the surface Fermi level near the...
232
Authors: Goutam Kumar Dalapati, Avishek Kumar, Andrew See Weng Wong, Manippady Krishna Kumar, Ching Kean Chia, Ghim Wei Ho, Dong Zhi Chi
Abstract:Sputtered-deposited ZrO2 gate dielectric on epitaxial-GaAs/Ge substrates have been studied for complementary-metal-oxide-semiconductor (CMOS)...
504
Authors: Ming Kwei Lee, Chih Feng Yen, Sheng Hsiung Yang, Jung Chan Lee, Chi Hsuan Cheng, Wei Hau Cheng
Chapter 10: Power Electronics and Power Drives
Abstract:The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited...
1945