Paper Title:
The Resonant Tunneling in Si1-xGex/Si Superlattices
  Abstract

It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
645-648
DOI
10.4028/www.scientific.net/SSP.121-123.645
Citation
L. P. Xu, T. D. Wen, X. F. Yang, W. D. Zhang, "The Resonant Tunneling in Si1-xGex/Si Superlattices", Solid State Phenomena, Vols. 121-123, pp. 645-648, 2007
Online since
March 2007
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$32.00
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