Paper Title:
Realization of Silicon Nitride Template for Nanoimprint: A First Result
  Abstract

A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines as RIE dry etching mask, silicon nitride template of 100nm width with steep sidewalls is successfully realized.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
669-672
DOI
10.4028/www.scientific.net/SSP.121-123.669
Citation
Z. W. Liu, T. R. Zhang, L. T. Liu, Z. J. Li, "Realization of Silicon Nitride Template for Nanoimprint: A First Result", Solid State Phenomena, Vols. 121-123, pp. 669-672, 2007
Online since
March 2007
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$32.00
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