Paper Title:
Design and Simulation of a Mid-Infrared Quantum Cascade Laser Based on Ge-Si Superlattices
  Abstract

This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si0.5Ge0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6×6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm2.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
677-680
DOI
10.4028/www.scientific.net/SSP.121-123.677
Citation
Y. W. Lu, G. Sun, "Design and Simulation of a Mid-Infrared Quantum Cascade Laser Based on Ge-Si Superlattices", Solid State Phenomena, Vols. 121-123, pp. 677-680, 2007
Online since
March 2007
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Price
$32.00
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