Paper Title:
High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs
  Abstract

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
693-696
DOI
10.4028/www.scientific.net/SSP.121-123.693
Citation
L. C. Castro, D.L. Pulfrey, D.L. John, "High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs", Solid State Phenomena, Vols. 121-123, pp. 693-696, 2007
Online since
March 2007
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Price
$35.00
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