Paper Title:
Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces
  Abstract

At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.

  Info
Periodical
Solid State Phenomena (Volumes 121-123)
Edited by
Chunli BAI, Sishen XIE, Xing ZHU
Pages
835-838
DOI
10.4028/www.scientific.net/SSP.121-123.835
Citation
S. Perraud, C. David, Z.Z. Wang, "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces", Solid State Phenomena, Vols. 121-123, pp. 835-838, 2007
Online since
March 2007
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$32.00
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