Paper Title:
Structural and Electrochemical Evaluation of a Si Film Electrode Fabricated on a Ni Buffer Layer
  Abstract

Si and Si/Ni thin film electrodes less than 1m in total thickness were fabricated on the roughened Cu substrate by rf sputtering. Their surface morphology and crystalline structure were carefully investigated by means of FESEM and XRD. The morphology of films is dependent on the surface feature of substrate, and the grown films were amorphous. The initial capacity and the irreversible capacity loss of a Li/Si film cell were improved with insertion of a Ni buffer layer. The effect of the film morphology on the electrochemical properties of cells was demonstrated based on the observations of film electrodes.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
1011-1014
DOI
10.4028/www.scientific.net/SSP.124-126.1011
Citation
B. K. Lee, G. B. Cho, K. K. Cho, K.W. Kim, "Structural and Electrochemical Evaluation of a Si Film Electrode Fabricated on a Ni Buffer Layer", Solid State Phenomena, Vols. 124-126, pp. 1011-1014, 2007
Online since
June 2007
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Price
$32.00
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