Paper Title:
The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells
  Abstract

A-Si:H/Si wafer heterojunction solar cells with different ZnO:Al sputtering conditions were fabricated and the effects of sputtering conditions on device performance were evaluated. Various sputter condition(substrate temperature RT~200’C, working pressure 0.5mTorr~15mTorr, thickness 60~100nm) were tested and optimized as 130’C, 0.5mTorr, 80nm by measuring reflectance and sheet resistance of ZnO:Al layer on corning glass. However, when optimal ZnO:Al condition was applied to solar cells, series resistance was high which led to device efficiency ~10%. Dark I-V curves of with and w/o ZnO layer showed large difference, which means there is a kind of barrier to current flow between ZnO:Al and a-Si:H layer. Modified condition with double layer scheme was applied and lower series resistance and device efficiency above 12% could be reached. The improvement may be due to either suppression of Si oxide formation or less defect formation by impinging atoms.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
1015-1018
DOI
10.4028/www.scientific.net/SSP.124-126.1015
Citation
S. K. Kim, J. C. Lee, V. Dutta, S. J. Park, K. H. Yoon, "The Effect of ZnO:Al Sputtering Condition on a-Si:H / Si Wafer Heterojunction Solar Cells", Solid State Phenomena, Vols. 124-126, pp. 1015-1018, 2007
Online since
June 2007
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$32.00
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