Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 105-108 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.105 |
| Citation | Dae Hwan Kim et al., 2007, Solid State Phenomena, 124-126, 105 |
| Online since | June, 2007 |
| Authors | Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, Myong Suk Oh, Ho Keun Song, Jeong Hyuk Yim, Jae Bin Lee, Hyeong Joon Kim |
| Keywords | Breakdown Voltage, Thermal Treatment |
| Abstract | Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) was observed in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m-cm2, 1.33 eV respectively. |
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