Paper Title:
Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
  Abstract

4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances were characterized. A modified RCA method was used to clean the substrate before each procedure. Sacrificial oxide was grown after channel layer etching to eliminate plasma damage to the gate region. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The maximum oscillation frequency of 26.4 GHz and the cut-off frequency of 7.2 GHz were obtained. The power gain was 8.4 dB and the output power was 2.8 W/mm at 2 GHz.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
109-112
DOI
10.4028/www.scientific.net/SSP.124-126.109
Citation
J. H. Yim, H. K. Song, J. H. Moon, H. S. Seo, J. H. Lee, H. J. Na, J. B. Lee, H. J. Kim, "Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates", Solid State Phenomena, Vols. 124-126, pp. 109-112, 2007
Online since
June 2007
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Price
$35.00
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