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Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging

Journal Solid State Phenomena (Volumes 124 - 126)
Volume Advances in Nanomaterials and Processing
Edited by Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages 123-126
DOI 10.4028/www.scientific.net/SSP.124-126.123
Citation Chi Won Choi et al., 2007, Solid State Phenomena, 124-126, 123
Online since June, 2007
Authors Chi Won Choi, Ji Koon Park, Sang Sik Kang, Sung Ho Cho, Kyung Jin Kim, Sung Kwang Park, Heung Kook Choi, Jae Hyung Kim, Sang Hee Nam
Keywords CdTe, Hgl2 (mercuric iodide), Pbl2, PbO, Semiconductor
Abstract

We have developed a large area, flat panel detector for general applications to digital radiology. This paper presents the x-ray detection characteristics with various semiconductor radiation detectors (HgI2, PbI2, PbO, CdTe) derived by a novel wet coating process for large area deposition. The wet coating process could easily be made from large area films with printing paste mixed with semiconductor and binder material at room temperature. X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The HgI2 semiconductor was shown in much lower dark current than the others, and also has the best sensitivity. In this paper, reactivity and combination characters of semiconductor and binder material that affect electrical and x-ray detection properties would be verified through our experimental results.

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