Paper Title:
The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films
  Abstract

Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
1261-1264
DOI
10.4028/www.scientific.net/SSP.124-126.1261
Citation
J. H. Shim, N. H. Cho, "The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films", Solid State Phenomena, Vols. 124-126, pp. 1261-1264, 2007
Online since
June 2007
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