Electrical Properties of ZrO2 Capacitor Dielectrics Deposited by rf Magnetron Sputtering |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 13-16 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.13 |
| Citation | Chong Mu Lee et al., 2007, Solid State Phenomena, 124-126, 13 |
| Online since | June, 2007 |
| Authors | Chong Mu Lee, Keun Bin Yim, Anna Park, Ho Jin Kim |
| Keywords | Capacitor Dielectrics, Carrier Transport Machanism, Fixed Oxide Charge, RF Magnetron Sputtering, Zro2 |
| Abstract | The structure and electrical properties of ZrO2 dielectric thin films deposited by rf magnetron sputtering were investigated. The fixed oxide charge and interface trap density at the ZrO2/Si interface is substantially decreased by annealing at 500 C. Annealing treatment also enhances the quality of the film by reducing leakage current. The carrier transport mechanism in the ZrO2 film is dominated by thermionic emission. |
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