Paper Title:
In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture
  Abstract

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
1597-1600
DOI
10.4028/www.scientific.net/SSP.124-126.1597
Citation
H. W. Kim, S. K. Hwang, W. S. Cho, T. G. Ko, S. Y. Choi, W. I. Lee, S. E. Park, J. H. Joo, D. I. Kim, S. G. Kim, B. H. Choe, S. H. Min, J. H. Choi, "In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture", Solid State Phenomena, Vols. 124-126, pp. 1597-1600, 2007
Online since
June 2007
Keywords
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