High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 181-184 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.181 |
| Citation | Mikinori Ito et al., 2007, Solid State Phenomena, 124-126, 181 |
| Online since | June, 2007 |
| Authors | Mikinori Ito, Kazuaki Sawada, Makoto Ishida |
| Keywords | Epitaxial, Pt, γ-Al2O3 |
| Abstract | Epitaxial Pt films were grown on γ-Al2O3/Si (111) substrate by RF-magnetron sputtering. The γ-Al2O3 buffer layers were grown epitaxially using molecular beam epitaxy. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The results of XRD showed that high-quality Pt films were obtained at around 560°C. In addition, the Pt films exhibited a very smooth surface with the root-mean-square (rms) surface roughness is about 0.4 nm. |
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