Electrical Switching Characteristics of Nitrogen Doped Ge2Sb2Te5 Based Phase Change Random Access Memory Cell

Kim, Hyeong Joon; Hong, Suk Kyoung; Choi, Doo Jin; Kim, Myoung Sub; Jun, Jin Hyung; Oh, Jin Ho; Roh, Jae Sung

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Reliability of Electroplated Sn-37Pb Solder Bumps with Different Under Bump Metallizations (UBMs) during High Temperature Storage Test, p.5
Temperature Dependence of Dominant Hillock Phases during Electromigration of Eutectic SnPb Solder Lines, p.9
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Role of SrRuO₃ Buffer Layers in Enhancing Resistance Changing of Pr_0.7Ca_0.3MnO₃ Films, p.17
Electrical Switching Characteristics of Nitrogen Doped Ge₂Sb₂Te₅ Based Phase Change Random Access Memory Cell, p.21
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Home > Solid State Phenomena > Advances in Nanomaterials and Processing > Electrical Switching Characteristics of Nitrogen...

Paper Title:

Electrical Switching Characteristics of Nitrogen Doped Ge₂Sb₂Te₅ Based Phase Change Random Access Memory Cell

Periodical	Solid State Phenomena (Volumes 124 - 126)
Main Theme	Advances in Nanomaterials and Processing
Edited by	Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages	21-24
DOI	10.4028/www.scientific.net/SSP.124-126.21
Citation	Myoung Sub Kim et al., 2007, Solid State Phenomena, 124-126, 21
Online since	June, 2007
Authors	Myoung Sub Kim, Jin Hyung Jun, Jin Ho Oh, Hyeong Joon Kim, Jae Sung Roh, Suk Kyoung Hong, Doo Jin Choi
Keywords	Electrical Switching, Ge₂Sb₂Te₅, Nitrogen, PRAM, RESET
Price	US$ 28,-

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Abstract

Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80~1.00 ). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.