Paper Title:
Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors
  Abstract

SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
247-250
DOI
10.4028/www.scientific.net/SSP.124-126.247
Citation
W. J. Lee, M. H. Chun, K. S. Cheong, K. C. Park, C. O. Park, G. Z. Cao, S. K. Rha, "Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors", Solid State Phenomena, Vols. 124-126, pp. 247-250, 2007
Online since
June 2007
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Price
$32.00
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