Paper Title:
Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory
  Abstract

The ambient and denuded trench top corner at the step of gate oxidation play an important role to generate defect. Furthermore, dislocation-free flash process is proposed, and its mechanism as well. The impact on dislocation of the other processes is also discussed. And we knew that using of dry oxidation for gate oxide has the characteristic to reduce the dislocation. Consequently, the dislocation free wafer is obtained by changing gate oxide from wet to dry in manufacturing embedded flash.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
29-32
DOI
10.4028/www.scientific.net/SSP.124-126.29
Citation
N. H. Kim, H. Y. Yoo, E. G. Chang, "Dislocation-Free Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Process for Embedded Flash Memory", Solid State Phenomena, Vols. 124-126, pp. 29-32, 2007
Online since
June 2007
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Price
$32.00
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