Paper Title:
The Effect of Bias Power on the Etching Rate and Uniformity of Silicon Dioxide for N-Slot Inductively Coupled Plasma in TFT Application
  Abstract

The etching in SiO2 is a crucial step in fabricating thin film transistor. For large area etching, high density plasma which independently controls ion energy and ion flux is preferable than conventional RIE etcher for its high etching capability. In an attempt to understand how the bias power of N-slot ICP affects the etching rate and uniformity, we study the correlation among bias power, inductive power, etching rate and uniformity. The results show that the etching rate is proportional to the bias power up to 800 W which has the best uniformity. Beyond that power, the etching rate enters the different slope and the uniformity become worse. This phenomenon might be attributed to the combined effects of resist etching and polymer film growth. For N-slot ICP system, high etching rate and good uniformity can be obtained only when the bias power is in the moderate range.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
291-294
DOI
10.4028/www.scientific.net/SSP.124-126.291
Citation
C. H. Wei, Y. H. Chen, "The Effect of Bias Power on the Etching Rate and Uniformity of Silicon Dioxide for N-Slot Inductively Coupled Plasma in TFT Application", Solid State Phenomena, Vols. 124-126, pp. 291-294, 2007
Online since
June 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S.Y. Chun, Sang Jin Lee
Abstract:This paper descirbes the characteristics of gold films prepared by a hybrid plasma based an ion implantation/deposition (PBIID) system. The...
452
Authors: S.Y. Chun
Abstract:Combining nano-designed plasma source ion implantation and deposition (PSII&D) method has been developed with the pulsed cathodic arc plasma...
1397
Authors: Min Zhang, Guo Qiang Lin, Ai Min Wu, Sheng Zhi Hao, Chuang Dong, Li Shi Wen
Abstract:AlN thin films have been deposited on p-(100) Si and glass substrates by pulsed bias arc ion plating at different negative substrate biases....
1157
Authors: Feng Fang Wu, Jian Xin Deng, Pei Yan
Abstract:TiN coatings were produced on substrates of a hard metal at different bias by pulsed filtered vacuum cathode arc deposition assisted with ion...
481
Authors: Long Lu, Guang Guang Feng
Chapter 13: Surface Engineering/Coatings
Abstract:40Cr steel substrate was coated with Ti0.33Al0.67N films by Multi-arc ion technology. Analyses of substrate negative...
1235