Paper Title:
Surface Modification of Novel Organic-Inorganic Hybrid Dielectrics Using Self-Assembled Monolayers
  Abstract

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectric was synthesized by the sol-gel process. The surface of the prepared dielectric was modified by self-assembled monolayers (SAMs) treatment using wet chemical method. Prior to surface modification, the chemical inertness of prepared dielectric was investigated by immersing into various solvents such as toluene, acetone, isopropyl alcohol, and DI-water. The existence of SAMs on the surface of dielectric was confirmed by measuring current density-electric field characteristics and it was observed that surface morphology of SAMs-treated hybrid dielectric was very smooth.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
295-298
DOI
10.4028/www.scientific.net/SSP.124-126.295
Citation
S. H. Jeong, D. J. Kim, S. Lee, B. K. Park, J. H. Moon, "Surface Modification of Novel Organic-Inorganic Hybrid Dielectrics Using Self-Assembled Monolayers", Solid State Phenomena, Vols. 124-126, pp. 295-298, 2007
Online since
June 2007
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Price
$32.00
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