Paper Title:
The Effects of Current Type and Density on Dishing Phenomena in CMP Process
  Abstract

The dishing phenomena of soft materials in chemical mechanical polishing (CMP) process were problematic in delineating inlaid metal patterns. The inlaid copper structures were fabricated on Si wafer where SiO2 was thermally grown. Seed layer was deposited by thermal evaporate method followed by copper electrodeposition. Copper was electrodeposited with IBM paddle type electroplating machine to obtain uniform thickness of coating. The dishing amounts were measured at various current density and current type. The dishing amounts with pattern density and line width were also measured. The losses of copper were not sensitively dependent on current density however those were dependent on current type. The dishing amount of copper was decreased at high pattern density especially over 50% and increased with line width. Surface topology and grain size of coating were investigated with surface profilometer and FESEM.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
307-310
DOI
10.4028/www.scientific.net/SSP.124-126.307
Citation
W. Cho, Y. J. Ko, Y. M. Ahn, G. H. Chang, J. H. Lee, "The Effects of Current Type and Density on Dishing Phenomena in CMP Process", Solid State Phenomena, Vols. 124-126, pp. 307-310, 2007
Online since
June 2007
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Price
$32.00
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