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Dependency of Electrical Characteristics on Au Nano-Crystal Size for Non-Volatile Memory Fabricated with Au Nano-Crystal Embedded in PVK(Poly(N-Vinylcarbazole)) Layer

Journal Solid State Phenomena (Volumes 124 - 126)
Volume Advances in Nanomaterials and Processing
Edited by Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages 33-36
DOI 10.4028/www.scientific.net/SSP.124-126.33
Citation Chang Kyu Lee et al., 2007, Solid State Phenomena, 124-126, 33
Online since June, 2007
Authors Chang Kyu Lee, Jong Sung Kwon, In Chul Na, Byung Il Han, Young Min Kim, Jea Gun Park
Keywords Au Nano Crystal, Bistability, Curing, Nonvolatile Memory, PBD, PVK
Abstract

We demonstrated a nonvolatile memory fabricated with the sandwich device structure of Al/Au nano-crystals embedded in the PVK/Al. The bi-stable conduction switching characteristic (Ion/Ioff ratio) was >1x102, depending on Au nano-crystal size. The size and distribution of Au nano-crystals were determined by the inserted Au-layer thickness between PVK layers. The size of Au nano-crystals increased with the inserted Au-layer thickness. The uniform distribution of isolated Au nano-crystals was obtained with 5 nm of the inserted Au-layer thickness.

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