Paper Title:
Properties of Electrical Conductivity of Amorphous Tungsten-Doped Vanadium Oxide for Uncooled Microbolometers
  Abstract

In recent years, we have reported uncooled microbolometer with amorphous vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this changes of electronic structure attribute to electrical properties such as high TCR values of vanadium-tungsten oxide.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
343-346
DOI
10.4028/www.scientific.net/SSP.124-126.343
Citation
Y. H. Han, S. H. Lee, K. T. Kim, I. H. Choi, S. Moon, "Properties of Electrical Conductivity of Amorphous Tungsten-Doped Vanadium Oxide for Uncooled Microbolometers", Solid State Phenomena, Vols. 124-126, pp. 343-346, 2007
Online since
June 2007
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$32.00
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