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Improvement of Luminescent Properties of Phosphor Powders Coated with Nanoscaled SiO2 by Atomic Layer Deposition

Journal Solid State Phenomena (Volumes 124 - 126)
Volume Advances in Nanomaterials and Processing
Edited by Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages 375-378
DOI 10.4028/www.scientific.net/SSP.124-126.375
Citation Hyu Suk Kim et al., 2007, Solid State Phenomena, 124-126, 375
Online since June, 2007
Authors Hyu Suk Kim, Hyug Jong Kim, Hyung Su Kim, Young Kyu Jeong, Suk Hwan Kim, Sang Woo Lee, Bong Kyo Jeong, Hyuoung Ho Lee, Byung Ho Choi
Keywords Atomic Layer Deposition (ALD), BAM Phosphor, Photoluminescence (PL), Silicon Oxide (SiO), TEOS
Abstract

An investigation is reported by coating BaMgAl10O17:Eu2+ phosphor by silicon oxide using catalyzed atomic layer deposition. Nanoscaled SiO2 films were prepared at room temperature using tetraethoxysilane (TEOS), H2O and NH3 as precursors, reactant gas and catalyst, respectively. AES analysis showed the surface composition of coated phosphor was silicon oxide. In TEM and FE-SEM analysis, the growth rate was about 0.7 Å/cycle and the surface morphology became smoother and clearer than that of uncoated phosphor. The photoluminescence intensity (PL) increased up to 11.04% as ALD cycle increased up to 200 ALD cycle. This means that the reactive surface of uncoated phosphors is uniformly grown with stable silicon oxide to reduce the dead surface layer without change of bulk properties. Moreover, it is found that nanoscaled SiO2 films are quite effective for the improvement of the aging characteristics of photoluminescence.

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