Pentacene Organic Thin-Film Transistors with Dual-Gate Structure |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 383-386 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.383 |
| Citation | Jae Bon Koo et al., 2007, Solid State Phenomena, 124-126, 383 |
| Online since | June, 2007 |
| Authors | Jae Bon Koo, Jung Wook Lim, Chan Hoe Ku, Sang Chul Lim, Jung Hun Lee, Seong Hyun Kim, Sun Jin Yun, Yong Suk Yang, Kyung Soo Suh |
| Keywords | Al2O3, Dual-Gate, Organic Thin-Film Transistor, Pentacene, Threshold Voltage |
| Abstract | We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential. |
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