Paper Title:
Pentacene Organic Thin-Film Transistors with Dual-Gate Structure
  Abstract

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
383-386
DOI
10.4028/www.scientific.net/SSP.124-126.383
Citation
J. B. Koo, J. W. Lim, C. H. Ku, S. C. Lim, J. H. Lee, S. H. Kim, S. J. Yun, Y. S. Yang, K. S. Suh, "Pentacene Organic Thin-Film Transistors with Dual-Gate Structure", Solid State Phenomena, Vols. 124-126, pp. 383-386, 2007
Online since
June 2007
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Price
$32.00
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