Paper Title:
Instability of OTFT with Organic Gate Dielectrics
  Abstract

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
407-410
DOI
10.4028/www.scientific.net/SSP.124-126.407
Citation
S. C. Lim, S. H. Kim, G. H. Kim, J. B. Koo, J. H. Lee, C. H. Ku, Y. S. Yang, D. J. Kim, T. H. Zyung, "Instability of OTFT with Organic Gate Dielectrics", Solid State Phenomena, Vols. 124-126, pp. 407-410, 2007
Online since
June 2007
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$32.00
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