Instability of OTFT with Organic Gate Dielectrics |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 407-410 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.407 |
| Citation | Sang Chul Lim et al., 2007, Solid State Phenomena, 124-126, 407 |
| Online since | June, 2007 |
| Authors | Sang Chul Lim, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim, Tae Hyoung Zyung |
| Keywords | Dielectric, Electronic Devices, Hysteresis, Organic Semiconductor, OTFT, PES, PVP |
| Abstract | We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer. |
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