Instability of OTFT with Organic Gate Dielectrics |
| Journal |
Solid State Phenomena (Volumes 124 - 126) |
| Volume |
Advances in Nanomaterials and Processing |
| Edited by |
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages |
407-410 |
| DOI |
10.4028/www.scientific.net/SSP.124-126.407 |
| Online since |
June, 2007 |
| Authors |
Sang Chul Lim,
Seong Hyun Kim,
Gi Heon Kim,
Jae Bon Koo,
Jung Hun Lee,
Chan Hoe Ku,
Yong Suk Yang,
Do Jin Kim,
Tae Hyoung Zyung
|
| Keywords |
Dielectric, Electronic Devices, Hysteresis, Organic Semiconductor, OTFT, PES, PVP |
| Abstract |
We report the effects of instability with gate dielectrics of pentacene thin film transistors
(OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by
gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied
voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current
ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V.
The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit
measurement, we observed hysteresis behavior was caused by interface states of between the gate
insulator and the pentacene semiconductor layer. |
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