Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 41-44 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.41 |
| Citation | Beom Seok Kim et al., 2007, Solid State Phenomena, 124-126, 41 |
| Online since | June, 2007 |
| Authors | Beom Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim |
| Keywords | 2-Step Process, Ru MOCVD, Surface Morphology |
| Abstract | Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300oC using (2,4-demethylpentadienyl)(ethylcyclopenadienyl) ruthenium [Ru(DMPD)(EtCp)] and oxygen. Instead of conventional single step process, we investigated 2-step CVD process to enhance initial nucleation rate and reduce the incubation time for film formation. This process consisted of a seeding step, where high flow rate of oxygen and low process pressure were used, and a film growth step with low O2 flow rate and high pressure. The deposited Ru films by 2-step process have smooth surface morphologies compared to those by single step process. |
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