Paper Title:
Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen
  Abstract

Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300oC using (2,4-demethylpentadienyl)(ethylcyclopenadienyl) ruthenium [Ru(DMPD)(EtCp)] and oxygen. Instead of conventional single step process, we investigated 2-step CVD process to enhance initial nucleation rate and reduce the incubation time for film formation. This process consisted of a seeding step, where high flow rate of oxygen and low process pressure were used, and a film growth step with low O2 flow rate and high pressure. The deposited Ru films by 2-step process have smooth surface morphologies compared to those by single step process.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
41-44
DOI
10.4028/www.scientific.net/SSP.124-126.41
Citation
B. S. Kim, C. S. Hwang, H. J. Kim, "Improvement of Surface Morphologies of Ru Thin Films by 2-Step MOCVD Process Using (2,4-Demethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium and Oxygen", Solid State Phenomena, Vols. 124-126, pp. 41-44, 2007
Online since
June 2007
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Price
$35.00
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