Paper Title:
ITO Contact Properties with Amorphous Silicon for AM-OLED Application
  Abstract

In order to improve long term stability of a-Si:H TFT for AM-OLED application a new driving method compensating Vth shift requires a new device structure of which hole injection is enhanced. ITO film was investigated for the hole injection material because it is essential material for display devices and has high work function favorable for hole injection. From I-V characteristics of TFTs with two types of source and drain material, i.e. Cr and ITO, the contact properties were measured and compared. Although electron injection property of ITO was worse than Cr, hole injection property was comparable to that of Cr.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
423-426
DOI
10.4028/www.scientific.net/SSP.124-126.423
Citation
J. H. Jeon, H. H. Choe, J. H. Seo, "ITO Contact Properties with Amorphous Silicon for AM-OLED Application", Solid State Phenomena, Vols. 124-126, pp. 423-426, 2007
Online since
June 2007
Keywords
Cd
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Price
$32.00
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