Paper Title:
Characteristics of Pentacene with Different Polymer Gate Insulators for Organic Thin-Film Transistors
  Abstract

We investigated the characteristics of pentacene thin films of different materials for gate insulators using atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films are fabricated by evaporation on different polymer substrates. We used HMDS (Hexa Methyl Di Silazane), PVA (Poly Vinyl Alcohol) and PMMA (Poly Methyl Meth Acrylate) for the polymer substrates, on which pentacene is deposited at various substrate temperatures. The case of pentacene deposited on the PMMA has the largest grain size and least trap concentration. We also fabricated pentacene TFTs with the PMMA gate insulator. Pentacene TFTs with PMMA gate insulator, shows high field-effect mobility (uFET= 0.03 cm2/Vs) and large on/off current ratio (>105) and small threshold voltage (Vth= -6 V).

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
451-454
DOI
10.4028/www.scientific.net/SSP.124-126.451
Citation
J. M. Kim, H. J. Her, J.H. Yoon, J. W. Kim, Y.J. Choi, C.J. Kang, D. Jeon, Y. S. Kim, "Characteristics of Pentacene with Different Polymer Gate Insulators for Organic Thin-Film Transistors", Solid State Phenomena, Vols. 124-126, pp. 451-454, 2007
Online since
June 2007
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$32.00
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