Paper Title:
Post-Annealing Effect of SiON Thin Film in Air
  Abstract

About 2-thick, amorphous SiON thin films were deposited by the PECVD method, and heated up to 1000oC in air to study the post-annealing effect on the composition and structure of the SiON film. SiON had a strong SiO2 binding energy with a weak N-binding, so that air-annealing resulted in nitrogen escape from the film. The inwardly transported oxygen from the atmosphere was simply supersaturated inside the annealed, amorphous SiON thin film.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
463-466
DOI
10.4028/www.scientific.net/SSP.124-126.463
Citation
D. B. Lee, D. H. Yoon, "Post-Annealing Effect of SiON Thin Film in Air", Solid State Phenomena, Vols. 124-126, pp. 463-466, 2007
Online since
June 2007
Keywords
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Price
$32.00
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