Paper Title:
Low Temperature O2 Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator
  Abstract

A novel process of wafer bonding between InP and a garnet crystal (Gd3Ga5O12, CeY2Fe5O12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
475-478
DOI
10.4028/www.scientific.net/SSP.124-126.475
Citation
J.W. Roh, J.S. Yang, S.H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, S. Lee, "Low Temperature O2 Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator", Solid State Phenomena, Vols. 124-126, pp. 475-478, 2007
Online since
June 2007
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$32.00
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