Paper Title:
Patterning of the Self-Assembled Monolayer Using the Zero Residual Nano-Imprint Lithography
  Abstract

Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on a surface by chemical bonding between the molecular head group and the surface. The surface properties can be controlled by the terminal functional group of the SAM layer. In order to utilize SAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterning of SAM layer in sub-micron size has been done by various techniques including direct-writing by dip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layer by &-contact printing. In this study, silane based SAM layer was patterned to the sub-micron size using zero residual Nano imprint Lithography, which is regarded as next generation lithography technique due to its simplicity, high throughput and high resolution pattern transferring capability. Using zero-residual layer imprinting, 300nm~2um sized SAM patterns can successfully fabricated. In order to check the surface property of patterned SAM layer, a solution containing nano Ag particles was spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited on the substrate.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
523-526
DOI
10.4028/www.scientific.net/SSP.124-126.523
Citation
K. Y. Yang, J. W. Kim, S. H. Hong, H. Lee, "Patterning of the Self-Assembled Monolayer Using the Zero Residual Nano-Imprint Lithography", Solid State Phenomena, Vols. 124-126, pp. 523-526, 2007
Online since
June 2007
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$32.00
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