Paper Title:
Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)
  Abstract

We present the linear stability analysis for the epitaxial thin film growth on the vicinal surface of strained Si and the growth mode diagrams of the epitaxial growth under various operation conditions. Competition between step-step elastic interactions and the asymmetry of incorporation of adatoms from the terraces to step edge is considered. Force monopoles at steps and their interaction lead to it on the vicinal surface while kinetic asymmetry of the adatom incorporation at steps due to Ehrlich-Schwoebel barrier prevents the step bunching instability. Growth mode on the vicinal surface is determined by the competition between elastic step-step interactions and Ehrlich-Schwoebel barrier.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
547-550
DOI
10.4028/www.scientific.net/SSP.124-126.547
Citation
P. R. Cha, "Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)", Solid State Phenomena, Vols. 124-126, pp. 547-550, 2007
Online since
June 2007
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