Paper Title:
The Calculation of Adatom Diffusion Process on Si and Ge Surfaces from First-Principles
  Abstract

We study Si adatom diffusion process near Si/Ge stepped surfaces from first-principles. Dependence of surface growth morphology on growing conditions such as temperature is not clearly understood. We calculate Ehrlich-Schwoebel(ES) barrier of stepped surfaces from first-principles and analyze adatom diffusion process to understand growth mechanism of the surfaces. The configuration of the surfaces with ES barrier would play a key role in the diffusion process because it controls hopping rates in the presence of step edges. Our results are likely to help correctly access the adatom diffusion process on the surfaces.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
551-554
DOI
10.4028/www.scientific.net/SSP.124-126.551
Citation
K. S. Chang, Y. G. Yoon, "The Calculation of Adatom Diffusion Process on Si and Ge Surfaces from First-Principles", Solid State Phenomena, Vols. 124-126, pp. 551-554, 2007
Online since
June 2007
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$32.00
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