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Influence of Structural Parameters to Engineer the Band Gaps in Ternary Pnictide Semiconductors - Theory as a Tool

Journal Solid State Phenomena (Volumes 124 - 126)
Volume Advances in Nanomaterials and Processing
Edited by Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages 57-60
DOI 10.4028/www.scientific.net/SSP.124-126.57
Citation Rita John, 2007, Solid State Phenomena, 124-126, 57
Online since June, 2007
Authors Rita John
Keywords Band Gap Anomaly, Crystal Field Splitting, Ternary Pnictides
Abstract

The band gap anomaly exhibited by ABC2 : A = Cd; B = Si,Ge,Sn; C = P,As pnictides with respect to their binary analogs GaP, Ga0.5In0.5P, InP, GaAs, Ga0.5In0.5As, InAs is studied using Tight Binding Linear Muffin Tin Orbital (TBLMTO) method as an investigating theoretical tool. The influence of the structural parameters, η and u are analyzed to enable one to tune energy gap to make tailor made compounds.

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