Paper Title:
Influence of Structural Parameters to Engineer the Band Gaps in Ternary Pnictide Semiconductors - Theory as a Tool
  Abstract

The band gap anomaly exhibited by ABC2 : A = Cd; B = Si,Ge,Sn; C = P,As pnictides with respect to their binary analogs GaP, Ga0.5In0.5P, InP, GaAs, Ga0.5In0.5As, InAs is studied using Tight Binding Linear Muffin Tin Orbital (TBLMTO) method as an investigating theoretical tool. The influence of the structural parameters, η and u are analyzed to enable one to tune energy gap to make tailor made compounds.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
57-60
DOI
10.4028/www.scientific.net/SSP.124-126.57
Citation
R. John, "Influence of Structural Parameters to Engineer the Band Gaps in Ternary Pnictide Semiconductors - Theory as a Tool", Solid State Phenomena, Vols. 124-126, pp. 57-60, 2007
Online since
June 2007
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Madalin Ion Rusu, Daniel Tenciu, Nicolae Catalin Zoita, Roger Notonier, Alain Tonetto, Cristiana Eugenia Ana Grigorescu
III. Materials in Product Manufacturing, Properties and Technological Characteristics
Abstract:Bulk polycrystalline MnGexSby materials doped with Co or Fe were prepared and investigated with the aim of obtaining...
329
Authors: Nicolas Brisset, Grzegorz Chajewski, Adam Pikul, Olivier Tougait, Mathieu Pasturel
Chapter 1: Intermetallic Compounds
Abstract:A novel ternary compound, namely U3Pt12Si4, which is best described by the crystallographic...
86