Paper Title:
Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns
  Abstract

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
603-606
DOI
10.4028/www.scientific.net/SSP.124-126.603
Citation
S. H. Won, S. H. Go, J. G. Lee, "Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns", Solid State Phenomena, Vols. 124-126, pp. 603-606, 2007
Online since
June 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kwang Ki Lee, Kwang Soon Lee, Tae Won Kim
Abstract:Physical vapor deposition technique has been employed to develop a thin film of OLED, and atomic force microscopy was used to investigate...
1431
Authors: Hui Qing Fan, Jin Chen, Xiu Li Chen
Abstract:Lead magnesium niobate-lead titanate (0.8Pb(Mg1/3Nb2/3)O3-0.2PbTiO3, PMN-PT) thick films in the thickness range about 75 μm have been...
24
Authors: Masashi Kato, H. Ono, Masaya Ichimura
Abstract:We performed electrochemical deposition of ZnO on the surfaces of 4H-SiC epilayers and characterized Ni Schottky diodes fabricated on the...
669
Authors: Jie Xing, Xiu Hua Chen, Wen Hui Ma, Rui Li, Jian Jun Yang, Jie Yu
Chapter 2: Materials and Alloys
Abstract:In order to discuss the growth mechanism of LSGM films, La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM) thin films electrolytes were fabricated on Si...
735