Paper Title:
Electric Field Induced Metal-Insulator Transition of Vanadium Dioxide Films on Sapphire Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering
  Abstract

Single phase monoclinic vanadium dioxide (VO2) films were successfully grown on sapphire (001) substrate by means of an inductively coupled plasma (ICP)-assisted sputtering with an internal coil. In x-ray diffraction patterns, we observed reflections originating from monoclinic VO2 with a main peak at 2θ = 39.77° corresponding to VO2 (020) for films on sapphire (001) substrates. The VO2 films exhibited metal-insulater transition (MIT) at temperatures around 65°C with three orders of change in resistivity. A simple device of VO2 film on sapphire (001) substrate having aluminum electrodes as ohmic contacts with gap separation of 1.0 mm showed current jump at an applied voltage of 48 V. The current jumped from 7 mA to 200 mA which was a limited value of voltage source.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
703-706
DOI
10.4028/www.scientific.net/SSP.124-126.703
Citation
K. Okimura, Y. Nihei, Y. Sasakawa, "Electric Field Induced Metal-Insulator Transition of Vanadium Dioxide Films on Sapphire Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering", Solid State Phenomena, Vols. 124-126, pp. 703-706, 2007
Online since
June 2007
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$32.00
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