Paper Title:
Fabrication of Flexible CIGS Solar Cell on Stainless Steel Substrate by co-Evaporation Process
  Abstract

Silicone dioxide (SiO2) layer as an electrical insulator and diffusion barrier was deposited on a flexible stainless steel substrate by plasma enhanced CVD process. And we deposited Mo/Na-doped Mo bi-layer back contact on the oxide layer in order to supply Na into the CIGS absorber. Then we deposited CIGS layer by three-stage process using elemental co-evaporation method and completed the solar cell fabrication. Without antireflection coating, the best CIGS solar cell on the stainless steel showed the conversion efficiency of 10.57 % with Jsc = 33.38 mA/cm2 and Voc = 0.519 V and FF = 0.61 for an active area of 0.45 cm2.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
73-76
DOI
10.4028/www.scientific.net/SSP.124-126.73
Citation
M. S. Kim, J. H. Yun, K. H. Yoon, B. T. Ahn, "Fabrication of Flexible CIGS Solar Cell on Stainless Steel Substrate by co-Evaporation Process", Solid State Phenomena, Vols. 124-126, pp. 73-76, 2007
Online since
June 2007
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Price
$32.00
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