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Prospects of Potential Semiconductor Spin Detectors

Journal Solid State Phenomena (Volumes 124 - 126)
Volume Advances in Nanomaterials and Processing
Edited by Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages 839-842
DOI 10.4028/www.scientific.net/SSP.124-126.839
Citation W.M. Chen et al., 2007, Solid State Phenomena, 124-126, 839
Online since June, 2007
Authors W.M. Chen, I.A. Buyanova, Y. Oka, C.R. Abernathy, S.J. Pearton
Keywords InGaN, Magneto Optic, Quantum Well, Spin Detector, Spin Dynamics, Spin Relaxation, Spin-LED, Spintronic, Ultrafast Laser Spectroscopy, ZnCdSe
Abstract

We review our recent experimental findings by optical orientation spectroscopy that show efficient spin relaxation within semiconductor spin detectors to be an important factor limiting efficiency of spin injection in spin light-emitting structures based on ZnCdSe/ZnMnSe and InGaN/GaMnN. We provide evidence for the physical mechanism responsible for the observed efficient spin relaxation that accompanies momentum and energy relaxation of excitons/carriers. These findings call for increasing efforts in suppressing spin relaxation in spin detectors.

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