Paper Title:
Prospects of Potential Semiconductor Spin Detectors
  Abstract

We review our recent experimental findings by optical orientation spectroscopy that show efficient spin relaxation within semiconductor spin detectors to be an important factor limiting efficiency of spin injection in spin light-emitting structures based on ZnCdSe/ZnMnSe and InGaN/GaMnN. We provide evidence for the physical mechanism responsible for the observed efficient spin relaxation that accompanies momentum and energy relaxation of excitons/carriers. These findings call for increasing efforts in suppressing spin relaxation in spin detectors.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
839-842
DOI
10.4028/www.scientific.net/SSP.124-126.839
Citation
W.M. Chen, I.A. Buyanova, Y. Oka, C.R. Abernathy, S. J. Pearton, "Prospects of Potential Semiconductor Spin Detectors", Solid State Phenomena, Vols. 124-126, pp. 839-842, 2007
Online since
June 2007
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