Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 89-92 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.89 |
| Citation | Hee Chang Jeon et al., 2007, Solid State Phenomena, 124-126, 89 |
| Online since | June, 2007 |
| Authors | Hee Chang Jeon, Chan Jin Park, Hoon Young Cho, Tae Won Kang, Tae Whan Kim, Jae Eung Oh |
| Keywords | AlxGa1-xN/GaN Heterointerface, Deep Level, Two Dimensional Electron Gas Region |
| Abstract | Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the AlxGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region. |
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