Paper Title:
Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates
  Abstract

The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
93-96
DOI
10.4028/www.scientific.net/SSP.124-126.93
Citation
N.K. Park, H.S. Lee, Y.S. No, T. W. Kim, J. Y. Lee, W.K. Choi, "Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates", Solid State Phenomena, Vols. 124-126, pp. 93-96, 2007
Online since
June 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Keiichiro Masuko, Tatsuru Nakamura, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura
Abstract:The transport properties of Zn0.88-xMgxMn0.12O/ZnO modulation-doped heterostructures (x≤0.15) were investigated. The heterostructures were...
1
Authors: Valentin M. Ievlev, Maxim P. Sumets, Alexander V. Kostyuchenko
Abstract:The substructure and electrical properties of the films with the thickness up to 2.0 µm deposited on Si by the methods of the radio frequency...
53
Authors: Fariza binti Mohamad, Junji Sasano, Tsutomu Shinagawa, Seiji Watase, Masanobu Izaki
New Energy Materials
Abstract:The (111)-p-Cu2O/(0001)-n-ZnO heterostructure was successfully fabricated using low-temperature electrodeposition method on...
1412
Authors: Jian Huang, Lin Jun Wang, Ke Tang, Ji Jun Zhang, Run Xu, Yi Ben Xia, Xiong Gang Lu
Optical/Electronic/Magnetic Materials
Abstract:ZnS films were prepared on silicon (Si) and glass substrates by radio-frequency (RF) magnetron sputtering method. The effect of annealing...
1277
Authors: Kazuhiro Endo, Noriaki Ikenaga, P. Badica
Chapter 6: Multiferroics
Abstract:In the last years oxide materials for electronics show significant progress. However, many details regarding technology control of the...
209