Paper Title:
Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors
  Abstract

Cu(In1-xAlx)Se2 films were prepared using a two-stage process of sputtering and selenization. Stacked elemental layer precursors of Cu, In and Al were deposited onto corning glass substrates by RF magnetron sputtering. Precursors with different Cu/(In+Al) and In/Al ratio were selenized using elemental Se-vapor at atmospheric pressure in a commercial tube furnace under constant argon gas flow. Films with good adhesion to the substrate were grown successfully. All of the films show strong (112) and (220)/(204) CIS peaks. Addition of Al, at expense of In, shifts the peaks towards higher 2θ. This paper explores the possibility to use sputtering deposition and selenization process to grow Cu(InAl)Se2 thin films for solar cells applications.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
931-934
DOI
10.4028/www.scientific.net/SSP.124-126.931
Citation
B. Munir, R. A. Wibowo, E. S. Lee, K. H. Kim, "Growth of Cu(In1-xAlx)Se2 Thin Films by Atmospheric Pressure Selenization of Sputtered Precursors", Solid State Phenomena, Vols. 124-126, pp. 931-934, 2007
Online since
June 2007
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