Paper Title:
Characterization of Cu(In,Ga)3Se5 Thin Film for Top Cell in CIGS Tandem Solar Cells
  Abstract

Cu(In,Ga)3Se5 films were deposited on soda-lime glass substrate by three-stage co-evaporation process. In the film, the band gap increased as the Cu content decreased and also as the Ga content increased. The grain size became smaller as the Ga content increased. In the Cu1.29(In1-xGax)3Se5 system, the maximum hole concentration was 1x1015 /cm3 when the Ga content was 0.5 and its band gap was 1.45 eV. Comparing the conventional CIGS solar cell with Cu0.8(In0.7Ga0.3)Se2 film, the series resistance is too large, indicating that further p-type doping in the Cu(In,Ga)3Se5 film is necessary to improve cell efficiency for the top cell application in CIGS tandem solar cells.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
959-962
DOI
10.4028/www.scientific.net/SSP.124-126.959
Citation
K. H. Kim, B. T. Ahn, S. H. Kwon, J. H. Yun, K. H. Yoon, "Characterization of Cu(In,Ga)3Se5 Thin Film for Top Cell in CIGS Tandem Solar Cells", Solid State Phenomena, Vols. 124-126, pp. 959-962, 2007
Online since
June 2007
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