Paper Title:
Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
  Abstract

A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer.

  Info
Periodical
Solid State Phenomena (Volumes 124-126)
Edited by
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Pages
97-100
DOI
10.4028/www.scientific.net/SSP.124-126.97
Citation
B. G. Min, J. M. Lee, S. I. Kim, C. W. Ju, K. H. Lee, "Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall", Solid State Phenomena, Vols. 124-126, pp. 97-100, 2007
Online since
June 2007
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$32.00
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