Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall |
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| Journal | Solid State Phenomena (Volumes 124 - 126) |
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| Volume | Advances in Nanomaterials and Processing |
| Edited by | Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park |
| Pages | 97-100 |
| DOI | 10.4028/www.scientific.net/SSP.124-126.97 |
| Citation | Byoung Gue Min et al., 2007, Solid State Phenomena, 124-126, 97 |
| Online since | June, 2007 |
| Authors | Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee |
| Keywords | Herojunction Bipolar Transistor (HBT), InGaAs, InP, Self-Align, Sidewall |
| Abstract | A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer. |
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