Paper Title:
Preparation and Characterization of Hard (Ti,B)N Films by Ion Mixing and Vapor Deposition
  Abstract

Titanium boron nitride (Ti,B)N films have been prepared by depositing Ti and B atom vapor on a (100) Si single crystal and an amorphous glass substrates under simultaneous irradiation of N ions, that is ion mixing and vapor deposition (IVD) technique. The transport ratio of metals and ion, (Bva+Tiva)/Nion, was fixed at 4, and the film thickness was supposed to be 1 m. With an increase in the evaporation ratio of B and Ti, Bva/Tiva, from 0 to 3, microstructure of the film was changed from fine triangular to granular morphology. It was confirmed by the XPS analysis that N ions were preferentially coordinated with Ti atoms when the Bva/Tiva was relatively low otherwise nitriding of B probably occurred. This result was also supported by the XRD spectra of the films. Knoop hardness of the (Ti,B)N films was strongly dependent on the Bva/Tiva. The highest hardness of approximately 5000 was observed at the Bva/Tiva=0.3; this implies that a small amount of alloying B considerably increases the film hardness.

  Info
Periodical
Solid State Phenomena (Volume 127)
Edited by
Masaaki Naka
Pages
251-256
DOI
10.4028/www.scientific.net/SSP.127.251
Citation
M. Yamashita, S. Hanaki, D. Iwasaki, H. Uchida, "Preparation and Characterization of Hard (Ti,B)N Films by Ion Mixing and Vapor Deposition ", Solid State Phenomena, Vol. 127, pp. 251-256, 2007
Online since
September 2007
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$32.00
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