Luminescence of Doped Nanoparticles of Wide Band Gap II-VI Compounds |
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| Journal | Solid State Phenomena (Volume 128) |
|---|---|
| Volume | Doped Nanopowders |
| Edited by | Witold Łojkowski and John R. Blizzard, Urszula Narkiewicz and Janusz D. Fidelus |
| Pages | 123-134 |
| DOI | 10.4028/www.scientific.net/SSP.128.123 |
| Citation | M. Godlewski et al., 2007, Solid State Phenomena, 128, 123 |
| Online since | October, 2007 |
| Authors | M. Godlewski, S. Yatsunenko, M. Zalewska, A. Kłonkowski, Tomas Strachowski, Witold Łojkowski |
| Keywords | Doping, II-VI Semiconductors, Luminescence, Nanoparticle, Rare Earth Ion, Transition Metal Ions, Wide Band Gap Oxides |
| Abstract | Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent interactions of free carriers with impurities are discussed. These interactions enhance the TM, RE intra-shell transitions by increasing the rate of host to impurity energy transfer. It is shown also that Al doping increases the intensity of light emission from ZnO nanoparticles. |
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