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Luminescence of Doped Nanoparticles of Wide Band Gap II-VI Compounds

Journal Solid State Phenomena (Volume 128)
Volume Doped Nanopowders
Edited by Witold Łojkowski and John R. Blizzard, Urszula Narkiewicz and Janusz D. Fidelus
Pages 123-134
DOI 10.4028/www.scientific.net/SSP.128.123
Citation M. Godlewski et al., 2007, Solid State Phenomena, 128, 123
Online since October, 2007
Authors M. Godlewski, S. Yatsunenko, M. Zalewska, A. Kłonkowski, Tomas Strachowski, Witold Łojkowski
Keywords Doping, II-VI Semiconductors, Luminescence, Nanoparticle, Rare Earth Ion, Transition Metal Ions, Wide Band Gap Oxides
Abstract

Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent interactions of free carriers with impurities are discussed. These interactions enhance the TM, RE intra-shell transitions by increasing the rate of host to impurity energy transfer. It is shown also that Al doping increases the intensity of light emission from ZnO nanoparticles.

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